| PART |
Description |
Maker |
| KRC886T KRC881T KRC882T KRC883T KRC884T KRC885T KR |
Built in Bias Resistor
EPITAXIAL PLANAR NPN TRANSISTOR (SWITCHING, AUDIO MUTING)
(KRC881T - KRC886T) EPITAXIAL PLANAR NPN TRANSISTOR
300 mA, 20 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR
|
Korea Electronics (KEC)
KEC[KEC(Korea Electronics)]
|
| 2SC5099 2SC5099P |
6 A, 80 V, NPN, Si, POWER TRANSISTOR
Silicon NPN Triple Diffused Planar Transistor(Audio and General Purpose)
|
SANKEN[Sanken electric]
|
| 2SC2705Y 2SC2705 |
TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) AUDIO FREQUENCY AMPLIFIER APPLICATIONS
TRANSISTOR | BJT | NPN | 150V V(BR)CEO | 50MA I(C) | TO-92VAR
|
TOSHIBA
|
| 2SC2458 2SC2458L |
Transistor Silicon NPN Epitaxial Type (PCT process) Audio Amplifier Applications Low Noise Audio Amplifier Applications
TRANSISTOR (AUDIO AMPLIFIER APPLICATIONS)
|
TOSHIBA[Toshiba Semiconductor]
|
| 2SC1815-X-T92-B 2SC1815-X-T92-K 2SC1815 2SC1815G-X |
AUDIO FREQUENCY AMPLIFIER HIGH FREQUENCY OSC NPN TRANSISTOR
150 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
|
UNISONIC TECHNOLOGIES CO LTD
|
| 2SD596 2SD596-L 2SD596-T2B 2SD596DV1 2SD596DV4 2SD |
TRANSISTOR | BJT | NPN | 25V V(BR)CEO | 700MA I(C) | SOT-346 晶体管|晶体管|叩| 25V的五（巴西）总裁| 700mA的一（c）|的SOT - 346
AUDIO FREQUENCY POWER AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD
Silicon transistor
|
NEC, Corp.
NEC Corp.
ETC
|
| 154-22 153-28 154-18 154-04 154-10 154-14 154-12 1 |
TRANSISTOR | BJT | NPN | 220V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 180V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 140V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 160V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 260V V(BR)CEO | 7.5A I(C)
TRANSISTOR | BJT | NPN | 200V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 300V V(BR)CEO | 7.5A I(C)
TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 240V V(BR)CEO | 7.5A I(C)
TRANSISTOR | BJT | NPN | 40V V(BR)CEO | 7.5A I(C) | STR-1/4 晶体管|晶体管|叩| 40V的五（巴西）总裁| 7.5AI（丙）|个STR - 1 / 4
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 7.5A I(C) | STR-1/4 晶体管|晶体管|叩| 60V的五（巴西）总裁| 7.5AI（丙）|个STR - 1 / 4
TRANSISTOR | BJT | NPN | 280V V(BR)CEO | 7.5A I(C) 晶体管|晶体管| npn型| 280伏特五（巴西）总裁| 7.5AI（丙
|
NXP Semiconductors N.V.
Bel Fuse, Inc.
YEONHO Electronics Co., Ltd.
|
| 2SC311207 2SC3112 2SC3112-B |
150 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
Silicon NPN Epitaxial Type (PCT process) For Audio Amplifier and Switching Applications
|
Toshiba Semiconductor
|
| KRC231M KRC233M KRC232M |
(KRC231M - KRC233M) EPITAXIAL PLANAR NPN TRANSISTOR
EPITAXIAL PLANAR NPN TRANSISTOR (SWITCHING, AUDIO MUTING, INTERFACE CIRCUIT AND DRIVER CIRCUIT)
|
KEC[KEC(Korea Electronics)]
|
| NTE171 |
Silicon NPN Transistor Audio/Video Amplifier
|
NTE[NTE Electronics]
|
| KTD1303 |
EPITAXIAL PLANAR NPN TRANSISTOR (AUDIO MUTING)
|
KEC[KEC(Korea Electronics)]
|
| 2SC5344 |
NPN Silicon Transistor (Audio power amplifier application)
|
AUK[AUK corp]
|
